3.3 kV 4H-SiC JBS diodes with single-zone JTE termination-Reference-Cited by-同舟云学术

3.3 kV 4H-SiC JBS diodes with single-zone JTE termination

Published:2017-09 Issue: Volume:181 Page:10-15
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Pan Yan,Tian Liang,Wu Hao,Li Yongping,Yang Fei

Funder

National High Technology R&D Program of China

Program of State Grid Smart Research Institute

Beijing Municipal Science and Technology Project

Program of Global Energy Interconnection Research Institute

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Wide band-gap power semiconductor devices;Millán,2013

2. Study of 4H-SiC Schottky diode designs for 3.3kV applications;Bartolf;Mater. Sci. Forum,2014

3. Simulation, fabrication and characterization of 4500V 4H-SiC JBS diode;Huang;Mater. Sci. Forum,2014

4. 1000V 4H-SiC JBS power diode cells;Hao;Micronanoelectron. Technol.,2013

5. Simulation of impurity freezeout through numerical solution of Poisson's equations and application to MOS device behavior;Jaeger;IEEE Trans. Electron Devices,1980

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1. Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure;Chinese Physics B;2023-01-01

2. The Optimization of 3.3 kV 4H-SiC JBS Diodes;IEEE Transactions on Electron Devices;2022-01

3. Asymmetric Split-Gate 4H-SiC MOSFET with Embedded Schottky Barrier Diode for High-Frequency Applications;Energies;2021-11-04

4. 3.3 kV SiC JBS diodes employing a P2O5 surface passivation treatment to improve electrical characteristics;2021 IEEE Energy Conversion Congress and Exposition (ECCE);2021-10-10

5. Design and Characteristics of an Etching Field Limiting Ring for 10kV SiC Power Device;2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS);2019-11