3.3 kV SiC JBS diodes employing a P2O5 surface passivation treatment to improve electrical characteristics-Reference-Cited by-同舟云学术

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3.3 kV SiC JBS diodes employing a P2O5 surface passivation treatment to improve electrical characteristics

Published:2021-10-10 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE Energy Conversion Congress and Exposition (ECCE)
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Author:

Renz Arne Benjamin,Vavasour Oliver James,Shah Vishal Ajit,Pathirana Vasantha,Trajkovic Tanya,Bonyadi Yeganeh,Wu Ruizhu,Ortiz-Gonzalez Jose Angel,Rong Xiaoyun,Baker Guy William Clarke,Mawby Philip,Gammon Peter Michael

Funder

Engineering and Physical Sciences Research Council

Innovate UK

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9594898/9594919/09594999.pdf?arnumber=9594999

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The successful implementation of a phosphorous-based surface passivation treatment into an industrial 650 V 4H-SiC JBS fabrication process;2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe);2022-09-18

2. Engineering the Schottky Interface of 3.3 kV SiC JBS Diodes Using a P<sub>2</sub>O<sub>5</sub> Surface Passivation Treatment;Materials Science Forum;2022-05-31

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