Study of 4H-SiC Schottky Diode Designs for 3.3kV Applications

Abstract

The static performance of different active and termination area designs for SiC-based Schottky diodes, suitable for 3.3kV applications, were investigated by means of extensive numerical simulations. We found quantitatively that the high electric field of SiC close to avalanche-breakdown is shielded most effectively from the Schottky interface by a trench-based design. Moreover, we conclude that the edge termination design with junction termination extension and four implantedp+guard rings is most robust against oxide interfacial charge.