Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process-Reference-Cited by-同舟云学术

Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process

Published:2003-09 Issue: Volume:433-436 Page:831-834
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Hatakeyama Tetsuo¹,Kushibe Mitsuhiro²,Watanabe Takatoshi³,Imai Seiji¹,Shinohe Takashi¹

Affiliation:

1. Toshiba Corporation

2. UPR Ultra-Low-Loss Power Device Technology Research Body

3. Corporate R&D Center, Toshiba Corporation

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.433-436.831.pdf

Reference16 articles.

1. J. Crofton and S. Sriram, IEEE tans. Elec. Dev. Vol 43 (1996), p.2305.

2. M. Treu, R. Rupp, H. Kapels and W. Bartsch, Mat. Sci. Forum Vol. 353-356 (2001), p.679.

3. F. A. Padvani and R. Stratton, Solid-State Electronics Vol 9 (1966), p.695.

4. T. Hatakeyama and T. Shinohe, Mat. Sci. Forum, Vol 389-393 (2002), p.1169 Corresponding author: tetsuo2. hatakeyama@toshiba. co. jp, Phone: +81-44-549-2142, Fax: +81-44-520-1501.

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