A comparative study of SiC MOSFETs with and without integrated SBD-Reference-Cited by-同舟云学术

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A comparative study of SiC MOSFETs with and without integrated SBD

Published:2022-10 Issue: Volume:128 Page:105576
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Tang Lei,Jiang Huaping^ORCID,Wei Jin,Hu Qiaozhen,Zhong Xiaohan,Qi Xiaowei

Publisher

Elsevier BV

Subject

General Engineering

Reference27 articles.

1. Fundamentals of Power Semiconductor Devices;Baliga,2008

2. Analytical PSpice model for SiC MOSFET based high power modules;Johannesson;Microelectron. J.,2016

3. Novel SiC Power MOSFET with Integrated Unipolar Internal Inverse MOS-Channel Diode;Uchida,2011

4. Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices, and Applications;Kimoto,2014

5. Proposal of a Novel GaN/SiC Hybrid FET (HyFET) with Enhanced Performance for High-Voltage Switching Applications;Wei,2016

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance enhancement of 4H-SiC superjunction trench MOSFET with extended high-K dielectric;Microelectronics Journal;2024-09

2. Review on Modeling and Mitigation of Bipolar Degradation in 4H-SiC;Power Electronic Devices and Components;2024-04

3. High-temperature Electrical Characteristics of JBS-integrated 4H-SiC MOSFETs;2023 IEEE 18th Conference on Industrial Electronics and Applications (ICIEA);2023-08-18

4. Analytical model and optimization strategy for SiC floating junction JBS diodes;Microelectronics Journal;2023-07

5. Comparative Study on High-temperature Electrical Properties of 1.2 kV SiC MOSFET and JBS-integrated MOSFET;IEEE Transactions on Power Electronics;2023

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