Effect of P+ region design on the fabrication of 6500 V 4H-SiC JBS diodes-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Effect of P+ region design on the fabrication of 6500 V 4H-SiC JBS diodes

Published:2020-01 Issue: Volume:530 Page:125317
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Sang Ling,Tian Lixin,Li Jialin,Niu Yingxi,Jin Rui

Funder

State Grid Corporation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference5 articles.

1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices;Bhatnagar;IEEE Trans. Electron Devices,1993

2. Step-controlled epitaxial growth of SiC: High quality homoepitaxy;Matsunami;Mater. Sci. Eng. R,1997

3. Schottky versus bipolar 3.3 kV SiC diodes;Perez-Tomas;Semicond. Sci. Technol.,2008

4. Simulation, fabrication and characterization of 4500V 4H-SiC JBS diode;Huang;Mater. Sci. Forum,2014

5. Performance evaluation of SiC JBS diodes rated for 6.5kV applications;Mihaila;Mater. Sci. Forum,2018

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High performance 1200V SiC MOSFET platform with AEC-Q101 certificate;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07

2. 1.2-kV 4H-SiC JBS Diodes Engaging P-Type Retrograde Implants;IEEE Transactions on Electron Devices;2022-12

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP