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Schottky versus bipolar 3.3 kV SiC diodes

  • Published:2008-09-29 Issue:12 Volume:23 Page:125004
  • ISSN:0268-1242
  • Container-title:Semiconductor Science and Technology
  • language:
  • Short-container-title:Semicond. Sci. Technol.

Author:

Pérez-Tomás A,Brosselard P,Hassan J,Jordà X,Godignon P,Placidi M,Constant A,Millán J,Bergman J P

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance;Journal of Semiconductors;2023-05-01

3. A SiC sidewall enhanced trench JBS diode with improved forward performance;Semiconductor Science and Technology;2022-05-24

4. Changes on Forward Recovery among Si, Ge and SiC-Based PiN Diode;2022 International Conference on Innovations in Science, Engineering and Technology (ICISET);2022-02-26

5. Comparative Study on Silicon Carbide (SiC) Polytypes in High Voltage Devices;2021 International Conference on Sustainable Energy and Future Electric Transportation (SEFET);2021-01-21
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