Analytical Quantum Model for Germanium Channel Gate-All-Around (GAA) MOSFET

Abstract

The paper proposes analytical model for Gate-All-Around Metal Oxide Semiconductor Field Effect Transistor (GAA-MOSFET) for germanium channel including quantum mechanical effects. It is achieved by solving coupled Schrodinger-Poisson’s equation using variational approach. The proposed model takes quantum confinement effects to obtain charge centroid and inversion charge model. By using these models the quantum version of inversion layer capacitance, inversion charge distribution function and Drain current expressions are modelled and the performance evaluation of the developed model is compared with Silicon channel GAA-MOSFET. Analytically modelled expressions are verified by comparing the model with simulation results.