A new approach to the self-consistent solution of the Schrodinger-Poisson equations in nanowire MOSFETs-Reference-Cited by-同舟云学术

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A new approach to the self-consistent solution of the Schrodinger-Poisson equations in nanowire MOSFETs

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Container-title:Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)
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Author:

Gnani E.,Reggiani S.,Rudan M.,Baccarani G.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/9370/29754/01356518.pdf?arnumber=1356518

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analytical Quantum Model for Germanium Channel Gate-All-Around (GAA) MOSFET;Journal of Nano Research;2019-08

2. Effect of strain in silicon nanotube FET devices for low power applications;The European Physical Journal Applied Physics;2019-01

3. An Explicit Unified Drain Current Model for Silicon-Nanotube-Based Ultrathin Double Gate-All-Around mosfets;IEEE Transactions on Nanotechnology;2018-11

4. A Threshold Voltage Model of Silicon-Nanotube-Based Ultrathin Double Gate-All-Around (DGAA) MOSFETs Incorporating Quantum Confinement Effects;IEEE Transactions on Nanotechnology;2017-09

5. A Continuous Compact Model Incorporating Higher-Order Correction for Junctionless Nanowire Transistors With Arbitrary Doping Profiles;IEEE Transactions on Nanotechnology;2016-07

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