Modelling the centroid and charge density in double-gate MOSFETs including quantum effects
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207217.2012.743081
Reference16 articles.
1. Alam, MK and Khosrum, QDM. (2007), ‘Self-Consistent Modeling of Ultra Thin Body Double Gate MOSFET’, inIEEE Conference on Electron Devices and Solid State Circuits, pp. 601–604
2. A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects
3. A physical short-channel threshold voltage model for undoped symmetric double-gate MOSFETs
4. Multiple-gate SOI MOSFETs
5. Speed superiority of scaled double-gate CMOS
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