Two-Dimensional Potential-Based Model for Tunnel Field-Effect Transistor (TFET)
Author:
Publisher
Springer Singapore
Link
http://link.springer.com/content/pdf/10.1007/978-981-15-3477-5_9
Reference12 articles.
1. Nagavarapu V, Jhaveri R, Woo JCS (2008) The tunnel source (PNPN) n-MOSFET: a novel high performance transistor. IEEE Trans Electron Device 55(4):1013–1019
2. Choi WY, Park BG, Lee JD, Liu TJK (2007) Tunneling field-effect transistors (TFETs) with sub threshold swing (SS) less than 60 mV/dec. IEEE Electron Device Lett 28(8):743–745
3. Zhang Q, Zhao W, Seabaugh A (2006) Low subthreshold-swing tunnel transistors. IEEE Electron Device Lett 27(4):297–300
4. Vimala P, Balamurugan NB (2013) Modelling the centroid and charge density in double-gate MOSFETs including quantum effects. Int J Electron 100(9):1283–1295
5. Vimala P, Balamurugan NB (2014) A new analytical model for nanoscale trigate SOI MOSFETs including quantum effects. IEEE J Electron Devices Soc 2(1):1–7
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