Silicon Nanowire and Carbon Nanotube MOSFET: A Simulation Study
Author:
Affiliation:
1. Dayananda Sagar College of Engineering,Electronics and Communication Engineering,Bangalore,India
2. National Engineering College,Electronics and Communication Engineering,Kovilpatti,Tamilnadu,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10169132/10169913/10170513.pdf?arnumber=10170513
Reference18 articles.
1. Carbon Nanotube Recessed Channel (CNT-RC) MOSFET for High Linearity/ULSI Applications
2. Cryogenic operation of Ω-gate p-type SiGe-on-insulator nanowire MOSFETs
3. An Insight Into Self-Heating Effects and Its Implications on Hot Carrier Degradation for Silicon-Nanotube-Based Double Gate-All-Around (DGAA) MOSFETs
4. Dual Material-Stacked Hetero-Dielectric-Junctionless Accumulation Mode Nanotube MOSFET for enhanced Hot Carrier and Trapped Charges Reliability
5. InAs Planar Nanowire Gate-All-Around MOSFETs on GaAs Substrates by Selective Lateral Epitaxy
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