Deformation Tests on 4H-SiC Single Crystals between 900°C and 1360°C and the Microstructure of the Deformed Samples
Author:
Affiliation:
1. Institut Pprime CNRS - Université de Poitiers - ENSMA - UPR 3346
2. POSCO, Technical Research Laboratories
3. Case Western Reserve University
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.338-342.517.pdf
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of stress on the evolution of Σ-shaped dislocation arrays in a 4H-SiC epitaxial layer;Journal of Applied Physics;2021-06
2. Stacking faults in intrinsic and N-doped 4H–SiC: true influence of the N-doping on their multiplicity;Philosophical Magazine;2013-04
3. Stacking faults at the boundary between 15R- and 4H-polytype in SiC;Materials Letters;2012-08
4. Bulk Growth of SiC - Review on Advances of SiC Vapor Growth for Improved Doping and Systematic Study on Dislocation Evolution;Silicon Carbide;2011-03-28
5. Defects created in N-doped 4H-SiC in the brittle regime: Stacking fault multiplicity and dislocation cores;Philosophical Magazine;2009-05-21
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