Effects of stress on the evolution of Σ-shaped dislocation arrays in a 4H-SiC epitaxial layer-Reference-Cited by-同舟云学术

Effects of stress on the evolution of Σ-shaped dislocation arrays in a 4H-SiC epitaxial layer

Published:2021-06 Issue:24 Volume:129 Page:245101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Na Moonkyong¹^ORCID,Bahng Wook¹^ORCID,Jang Hyemin¹²^ORCID,Kim Jung Min³,Jung Hyundon³

Affiliation:

1. Power Apparatus Research Division, Korea Electrotechnology Research Institute, 12, Jeongiui-gil, Seongsan-gu, Changwon-si, Gyeongsangnam-do 51543, Republic of Korea

2. Department of Materials Science and Engineering, Pusan National University, 2, Busandaehak-ro 63 beon-gil, Geumjeong-gu, Busan 46241, Republic of Korea

3. Etamax Co., Ltd., 280-17, Saneop-ro 155 Beon-gil, Gwonseon-gu, Suwon-si, Gyeonggi-do 16648, Republic of Korea

Funder

National Research Council of Science and Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0048195

Reference25 articles.

1. Current status and perspectives of ultrahigh-voltage SiC power devices

2. SiC Power Devices – An Overview

3. Glide velocities of Si-core partial dislocations for double-Shockley stacking fault expansion in heavily nitrogen-doped SiC during high-temperature annealing

4. Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

5. Recent advances in 4H-SiC epitaxy for high-voltage power devices

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Giant Enhancement of Hole Mobility for 4H-Silicon Carbide through Suppressing Interband Electron–Phonon Scattering;Nano Letters;2024-08-06

2. Revisiting stacking fault identification based on the characteristic photoluminescence emission wavelengths of silicon carbide epitaxial wafers;Materials Science in Semiconductor Processing;2024-06