Stacking faults in intrinsic and N-doped 4H–SiC: true influence of the N-doping on their multiplicity
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/14786435.2012.745018
Reference17 articles.
1. Degradation of hexagonal silicon-carbide-based bipolar devices
2. Stacking fault band structure in 4H–SiC and its impact on electronic devices
3. Structural instability of 4H–SiC polytype induced by n-type doping
4. Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates
5. Stacking faults in heavily nitrogen doped 4H-SiC
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Kink Migration along 30° Si‐Core Partial Dislocations in 4H‐SiC;physica status solidi (a);2022-04-21
2. Cathodoluminescence and EBIC investigations of stacking fault expansion in 4H-SiC due to e-beam irradiation at fixed points;Journal of Physics D: Applied Physics;2022-03-24
3. Low temperature stacking fault nucleation and expansion from stress concentrators in 4H-SiC;Acta Materialia;2017-10
4. Investigation of stacking faults introduced into 4H-SiC crystals by indentation;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2017-01
5. Effect of low energy electron beam irradiation on Shockley partial dislocations bounding stacking faults introduced by plastic deformation in 4H-SiC in its brittle temperature range;Superlattices and Microstructures;2016-11
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3