Improvement of Hump Phenomenon of Thin-Film Transistor by SiNX Film

Author:

KOBAYASHI Takahiro1,MATSUO Naoto1,HEYA Akira1,YOKOYAMA Shin2

Affiliation:

1. University of Hyogo

2. Hiroshima University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. [1] S. Kim, T. Y. Oh, J. Y. Yang, M. S. Yang, and I. J. Chung, “Analysis of the hump characteristics in poly-Si thin film transistor,” ECS Trans., vol.31, no.8, pp.63–67, 2006.

2. [2] M. Furuta, Y. Kamada, M. Kimura, T. Hiramatsu, T. Matsuda, H. Furuta, C. Li, S. Fujita, and T. Hirao, “Analysis of hump characteristics in thin-film transistors with ZnO channels deposited by sputtering at various oxygen partial pressures,” IEEE Electron. Device Lett., vol.31, no.11, pp.1257–1259, Nov. 2010.

3. [3] S.-H. Choi and M.-K. Han, “Effect of channel widths on negative shift of threshold voltage, including stress-induced hump phenomenon in InGaZnO thin-film transistors under high-gate and drain bias stress,” Appl. Phys. Lett., vol.100, no.4, pp.043503, Jan. 2012.

4. [4] Y.-M. Kim, K.-S. Jeong, H.-J. Yun, S.-D. Yang, S.-Y. Lee, Y.-C. Kim, J.-K. Jeong, H.-D. Lee, and G.-W. Lee, “Investigation of zinc interstitial ions as the origin of anomalous stress-induced hump in amorphous indium gallium zinc oxide thin film transistors,” Appl. Phys. Lett., vol.102, no.17, pp.173502, Apr. 2013.

5. [5] S.-H. Ho, T.-C. Chang, C.-W. Wu, W.-H. Lo, C.-E. Chen, J.-Y. Tsai, G.-R. Liu, H.-M. Chen, Y.-S. Lu, B.-W. Wang, T.-Y. Tseng, O. Cheng, C.-T. Huang, and S. M. Sze, “Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors,” Appl. Phys. Lett., vol.102, no.1, pp.012103, Jan. 2013.

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