Investigation of zinc interstitial ions as the origin of anomalous stress-induced hump in amorphous indium gallium zinc oxide thin film transistors-Reference-Cited by-同舟云学术

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Investigation of zinc interstitial ions as the origin of anomalous stress-induced hump in amorphous indium gallium zinc oxide thin film transistors

Published:2013-04-29 Issue:17 Volume:102 Page:173502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim Yu-Mi,Jeong Kwang-Seok,Yun Ho-Jin,Yang Seung-Dong,Lee Sang-Youl,Kim Yeong-Cheol,Jeong Jae-Kyeong,Lee Hi-Deok,Lee Ga-Won

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4803536

Reference27 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. 3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array

3. 42.2: World's Largest (15-inch) XGA AMLCD Panel Using IGZO Oxide TFT

4. Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors

5. Bias stress stability of zinc-tin-oxide thin-film transistors with Al2O3 gate dielectrics

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