Effect of channel widths on negative shift of threshold voltage, including stress-induced hump phenomenon in InGaZnO thin-film transistors under high-gate and drain bias stress-Reference-Cited by-同舟云学术

Effect of channel widths on negative shift of threshold voltage, including stress-induced hump phenomenon in InGaZnO thin-film transistors under high-gate and drain bias stress

Published:2012-01-23 Issue:4 Volume:100 Page:043503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Choi Sung-Hwan,Han Min-Koo

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3679109

Reference20 articles.

2. The Impact of Passivation Layers on the Negative Bias Temperature Illumination Instability of Ha-In-Zn-O TFT

3. Temperature-Dependent Transfer Characteristics of Amorphous InGaZnO4Thin-Film Transistors

4. Reliable Bottom Gate Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors with TiO[sub x] Passivation Layer

5. The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays

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