All-Digital PMOS and NMOS Process Variability Monitor Utilizing Shared Buffer Ring and Ring Oscillator-Reference-Cited by-同舟云学术

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All-Digital PMOS and NMOS Process Variability Monitor Utilizing Shared Buffer Ring and Ring Oscillator

Published:2012 Issue:4 Volume:E95.C Page:627-634
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

IIZUKA Tetsuya¹,ASADA Kunihiro¹

Affiliation:

1. Department of Electrical Engineering and Information Systems, The University of Tokyo

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/transele/E95.C/4/E95.C_4_627/_pdf

Reference8 articles.

1. Compact Modeling and Simulation of Circuit Reliability for 65-nm CMOS Technology

2. Fast Characterization of Threshold Voltage Fluctuation in MOS Devices

3. Within-Die Gate Delay Variability Measurement Using Reconfigurable Ring Oscillator

4. [4] E. Karl, P. Singh, D. Blaauw, and D. Sylvester, “Compact in-situ sensors for monitoring negative-bias-temperature-instability effect and oxide degradation,” IEEE International Solid-State Circuits Conference Digest of Technical Papers, pp.410-411, Feb. 2008.

5. [5] F. Klass, A. Jain, G. Hess, and B. Park, “An all-digital on-chip process-control monitor for process-variability measurements,” IEEE International Solid-State Circuits Conference Digest of Technical Papers, pp.408-409, Feb. 2008.

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