AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications
Author:
Affiliation:
1. Department of Electrical and Mechanical Engineering, Nagoya Institute of Technology
2. SIC Division, Air Water Inc.
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/transele/E105.C/10/E105.C_2022MMI0009/_pdf
Reference44 articles.
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2. [2] T. Palacios, A. Chakraborty, S. Rajan, C. Poblenz, S. Keller, S. DenBaars, J. Speck, and U. Mishra, “High-power AlGaN/GaN HEMTs for ka-band applications,” IEEE Electron Device Lett., vol.26, no.11, pp.781-783, 2005. 10.1109/led.2005.857701
3. [3] S. Leone, F. Benkhelifa, L. Kirste, C. Manz, R. Quay, and O.Ambacher, “Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si,” Journal of Applied Physics, vol.125, no.23, p.235701, 2019. 10.1063/1.5092653
4. [4] K. Remashan, N. Wong, K. Chan, S.P. Sim, and C.Y. Yang, “Modeling inversion-layer carrier mobilities in all regions of MOSFET operation,” Solid-State Electronics, vol.46, no.1, pp.153-156, 2002. 10.1016/s0038-1101(01)00285-4
5. [5] S. Arulkumaran, G. Ng, Z. Liu, and C. Lee, “High temperature power performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon,” Applied Physics Letters, vol.91, no.8, p.083516, 2007. 10.1063/1.2773987
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