Author:
Remashan K,Wong N.A,Chan K,Sim S.P,Yang C.Y
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Enz C. RF MOS transistor modeling. 2000 FSA Design Modeling Work Shop. 2000. p. 1– 20
2. A physically-based model of the effective mobility in heavily-doped n-MOSFETs;Villa;IEEE Trans Electron Dev,1998
3. Semi-empirical local NMOS mobility model for a 2-D device simulation incorporating screened minority impurity scattering;Mujtaba;NUPAD V,1994
4. Model for roll-off behaviour of electron effective mobility from universal curve;Shin;Electron Lett,1995
5. The impact of device scaling and power supply change on CMOS gate performance;Chen;IEEE Electron Dev Lett,1996
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