PtHf Silicide Formation Utilizing PtHf-Alloy Target for Low Contact Resistivity
Author:
Affiliation:
1. Tokyo Institute of Technology
2. TANAKA Holdings Co., Ltd.
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/transele/E99.C/5/E99.C_510/_pdf
Reference34 articles.
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3. [3] S. Ohmi, “Importance of Si surface flatness to realize high-performance Si devices utilizing ultrathin films with new material system,” IEICE Electron. Express, vol.11, no.14, p.20142006, 2014.
4. [4] T. Futase, T. Kamino, Y. Inaba, and H. Tanimoto, “Uniform, Low-Resistive Ni-Pt Silicide Fabricated by Partial Conversion with Low Metal-Consumption Ratio,” IEEE Trans. Semicond. Manuf., vol.24, no.4, pp.545-551, 2011.
5. [5] Z. Zhang, S.O. Koswatta, S.W. Bedell, A. Baraskar, M. Guillorn, S.U. Engelmann, Y. Zhu, J. Gonsalves, A. Pyzyna, M. Hopstaken, C. Witt, L. Yang, F. Liu, J. Newbury, W. Song, C. Cabral Jr., M. Lofaro, A.S. Ozcan, M. Raymond, C. Lavoie, J.W. Sleight, K.P. Rodbell, and P.M. Solomon, “Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node,” IEEE Electron Device Lett., vol.34, no.6, pp.723-725, 2013.
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