PdYb-Silicide with Low Schottky Barrier Height to n-Si Formed from Pd/Yb/Si(100) Stacked Structures-Reference-Cited by-同舟云学术

PdYb-Silicide with Low Schottky Barrier Height to n-Si Formed from Pd/Yb/Si(100) Stacked Structures

Published:2017 Issue:5 Volume:E100.C Page:458-462
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

OHMI Shun-ichiro¹,CHEN Mengyi¹,ZUO Weiguang¹,MASAHIRO Yasushi²

Affiliation:

1. Tokyo Institute of Technology

2. TANAKA Kikinzoku Kogyo Co., Ltd.

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/transele/E100.C/5/E100.C_458/_pdf

Reference35 articles.

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2. [2] S. Ohmi, “Importance of Si surface flatness to realize high-performance Si devices utilizing ultrathin films with new material system,” IEICE Electron. Express, vol.11, no.14, p.20142006, 2014.

3. [3] T. Futase, T. Kamino, Y. Inaba, and H. Tanimoto, “Uniform, Low-Resistive Ni-Pt Silicide Fabricated by Partial Conversion with Low Metal-Consumption Ratio,” IEEE Trans. Semicond. Manuf., vol.24, no.4, pp.545-551, 2011.

4. [4] T. Isogai, H. Tanaka, A. Teramoto, T. Goto, S. Sugawa, and T. Ohmi, “Advanced Method for Measuring Ultra-Low Contact Resistivity Between Silicide and Silicon Based on Cross Bridge Kelvin Resistor,” 2009 IEEE ICMTS Conf. Proc., pp.109-113, 2009.

5. [5] G. Larrieu, D.A. Yarekha, E. Dubois, N. Breil, and O. Faynot, “Arsenic-Segregated Rare-Earth Silicide Junctions: Reduction of Schottky Barrier and Integration in Metallic n-MOSFETs on SOI,” IEEE Electron Device Lett., vol.30, no.12, pp.1266-1268, 2009.

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