A 28-GHz-Band Highly Linear Stacked-FET Power Amplifier IC with High Back-Off PAE in 56-nm SOI CMOS
Author:
Affiliation:
1. Graduate School of Information, Production and Systems, Waseda University
2. Samsung R&D Institute Japan
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/transele/E103.C/4/E103.C_2019CDP0003/_pdf
Reference30 articles.
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2. [2] S. Hu, F. Wang, and H. Wang, “2.1 A 28GHz/37GHz/39GHz multiband linear Doherty power amplifier for 5G massive MIMO applications,” 2017 IEEE International Solid-State Circuits Conference (ISSCC), pp.32-33, Feb. 2017. 10.1109/isscc.2017.7870246
3. [3] D.P. Nguyen, T. Pham, and A.-V. Pham, “A 28-GHz Symmetrical Doherty Power Amplifier Using Stacked-FET Cells,” IEEE Trans. Microw. Theory Techn., vol.66, no.6, pp.2628-2637, June 2018. 10.1109/tmtt.2018.2816024
4. [4] N. Rostomyan, M. Özen, and P. Asbeck, “28 GHz Doherty Power Amplifier in CMOS SOI With 28% Back-Off PAE,” IEEE Microw. Compon. Lett., vol.28, no.5, pp.446-448, May 2018. 10.1109/lmwc.2018.2813882
5. [5] Y. Suzuki, K. Kawai, H. Okazaki, S. Narahashi, T. Asai, and Y.Okumura, “Experimental investigations of 28-GHz-Band power amplifier for massive MIMO transmitter,” 2017 IEEE Asia Pacific Microwave Conference (APMC), pp.479-482, Nov. 2017. 10.1109/apmc.2017.8251485
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