Investigation of parasitic bipolar transistor in rail-based electrostatic discharge (ESD) protection circuits-Reference-Cited by-同舟云学术

Investigation of parasitic bipolar transistor in rail-based electrostatic discharge (ESD) protection circuits

Author:

Lai Pengyu¹²,Li Xianrui¹,Wang Hui²,Chen Zhong²

Affiliation:

1. Key Lab. of High-Speed Circuit Design and EMC, Xidian University

2. Department of Electrical Engineering, University of Arkansas

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

Reference33 articles.

1. [1] C. Duvvury: “ESD qualification changes for 45 nm and beyond,” Proc. IEDM (2008) 1 (DOI: 10.1109/IEDM.2008.4796688).

3. [3] H. Gossner: “Design for ESD protection at its limits,” VLSI Technol. Symp. Dig. Tech. Papers (2013) T120.

4. [4] S. Voldman: ESD Circuits and Devices (Wiley, New York, 2006).

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