Simulation-Based Understanding of “Charge-Sharing Phenomenon” Induced by Heavy-Ion Incident on a 65nm Bulk CMOS Memory Circuit

Author:

MARU Akifumi1,MATSUDA Akifumi1,KUBOYAMA Satoshi2,YOSHIMOTO Mamoru1

Affiliation:

1. Tokyo Institute of Technology

2. JAXA

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Reference32 articles.

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2. [2] J.R. Schwank, “Basic Mechanisms of Radiation Effects in the Natural Space Environment,” Notes of the Short Course of the IEEE NSREC, pp.1-91, 1994.

3. [3] P.E. Dodd, “Basic Mechanisms for Single-Event Effects,” NSREC Short Course, pp.1-85, 1999.

4. [4] F.W. Sexton, “Destructive single-event effects in semiconductor devices and ICs,” IEEE Trans. Nucl. Sci., vol.50, no.3, pp.603-621, 2003. 10.1109/tns.2003.813137

5. [5] R. Koga, S.H. Penzin, K.B. Crawford, and W.R. Crain, “Single event functional interrupt (SEFI) sensitivity in microcircuits,” Proc. 4th Eur. Conf. RADECS, pp.311-318, 1997. 10.1109/radecs.1997.698915

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