Measuring of an unknown voltage by using single electron transistor based voltmeter

Author:

Biswas A.K.,

Abstract

In engineering and science, high operating speed, low power consumption, and high integration density equipment are financially indispensable. Single electron device (SED) is one such equipment. SEDs are capable of controlling the transport of only one electron through the tunneling transistor. It is single electron that is sufficient to store information in SED. Power consumed in the single electron circuit is very low in comparison with CMOS circuits. The processing speed of single electron transistor (SET) based device will be nearly close to electronic speed. SET attracts the researchers, scientists or technologists to design and implement large scale circuits for the sake of the consumption of ultra-low power and its small size. All the incidences for the case of a SET-based circuit happen when only a single electron tunnels through the transistors under the proper applied bias voltage and a small gate voltage or multiple gate voltages. For implementing a single electron transistor based voltmeter circuit, SET would be the best candidate to fulfil the requirements of it. Ultra-low noise is generated during tunneling SEDs. A D Flip-Flop is implemented and based on this, two kinds of registers like sequence register and сode register are made.

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka) (Publications)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Single Electron Tunneling Based Threshold Logic Unit;Communications in Computer and Information Science;2023-11-30

2. Parallel Comparator based voltmeter using Single Electron Tunneling Transistor;International Journal of Scientific Research in Science, Engineering and Technology;2021-12-15

3. Threshold Logic Technology based E-cube Routing on a 4-dimensional hypercube;International Journal of Scientific Research in Science, Engineering and Technology;2021-11-01

4. An Accumulator using Electron Tunneling Through Tunnel Junction;International Journal of Scientific Research in Science, Engineering and Technology;2021-09-10

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