Nonvolatile operation of vertical ferroelectric gate-all-around nanowire transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ac127c/pdf
Reference35 articles.
1. A new solid state memory resistor
2. Ferroelectric field effect transistors: Progress and perspective
3. Metal–Ferroelectric–Insulator–Semiconductor Memory FET With Long Retention and High Endurance
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