Metal–Ferroelectric–Insulator–Semiconductor Memory FET With Long Retention and High Endurance-Reference-Cited by-同舟云学术

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Metal–Ferroelectric–Insulator–Semiconductor Memory FET With Long Retention and High Endurance

Published:2004-06 Issue:6 Volume:25 Page:369-371
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:en
Short-container-title:IEEE Electron Device Lett.

Author:

Sakai S.,Ilangovan R.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/28937/01302229.pdf?arnumber=1302229

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