Growth of emergent simple pseudo-binary ferroelectrics and their potential in neuromorphic computing devices-Reference-Cited by-同舟云学术

Growth of emergent simple pseudo-binary ferroelectrics and their potential in neuromorphic computing devices

Published:2024 Issue:10 Volume:11 Page:2355-2371
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Jayakrishnan Ampattu R.¹²,Kim Ji S.³,Hellenbrand Markus³^ORCID,Marques Luís S.¹²,MacManus-Driscoll Judith L.³,Silva José P. B.¹²^ORCID

Affiliation:

1. Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal

2. Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, 4710-057 Braga, Portugal

3. Dept. of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd., Cambridge, CB3 OFS, UK

Abstract

Ferroelectric memory devices such as ferroelectric memristors, ferroelectric tunnel junctions, and field-effect transistors are considered among the most promising candidates for neuromorphic computing devices.

Funder

Fundação para a Ciência e a Tecnologia

Engineering and Physical Sciences Research Council

H2020 European Research Council

Royal Academy of Engineering

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/MH/D4MH00153B

Reference105 articles.

1. From Ferroelectric Material Optimization to Neuromorphic Devices

2. Integration of nanoscale memristor synapses in neuromorphic computing architectures

3. Training and operation of an integrated neuromorphic network based on metal-oxide memristors

4. Neuromorphic devices based on fluorite‐structured ferroelectrics

5. Next generation ferroelectric materials for semiconductor process integration and their applications