Anomalous excitation-power dependence of band-edge emission in Si involving radiation-induced defects
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/abb4aa/pdf
Reference52 articles.
1. Determination of boron and phosphorus concentration in silicon by photoluminescence analysis
2. Characterization of Residual Impurities in Highly Pure Si Crystals by Photoluminescence Technique
3. Characterization of NTD Silicon Crystals by the Photoluminescence Technique
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1. Detection Limit of Photoluminescence Method for Determination of Carbon Impurity Concentration in Silicon;2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2022-03-06
2. Calibration curve for the photoluminescence method after electron irradiation for quantifying low-level carbon in silicon;Japanese Journal of Applied Physics;2021-01-12
3. Free-to-bound emission from interstitial carbon and oxygen defects (CiOi) in electron-irradiated Si;Applied Physics Express;2021-01-01
4. Detection limit of carbon concentration measurement in Si for photoluminescence method after electron irradiation;Japanese Journal of Applied Physics;2020-11-17
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