Calibration curve for the photoluminescence method after electron irradiation for quantifying low-level carbon in silicon

Abstract

Abstract As an extension of the standardization of the photoluminescence method after electron irradiation [Tajima et al., Jpn. J. Appl. Phys. 59, SGGK05 (2020)], we present the calibration curve for quantifying C impurities ranging from 1 × 1014 to 3 × 1015 cm−3 in Czochralski-grown Si with resistivity higher than 50 Ω · cm (n-type) and than 5 kΩ · cm (p-type) and with the O concentration of 1.5 × 1017 cm−3. The intensity ratio of the G-line to the intrinsic emission normalized by the ratio of the reference sample was used as an index of the C concentration. The curve was determined as quadratic formulas by the substantial agreement between the theory and the experimental data, which allowed us to expand the applicability of the curve to the O concentration range up to 5.5 × 1017 cm−3. We showed that the relative root-mean-square discrepancy of the C concentration from values determined by secondary ion mass spectroscopy was 16%.