Detection limit of carbon concentration measurement in Si for photoluminescence method after electron irradiation

Abstract

Abstract We investigated the detection limit of carbon in Si for the photoluminescence (PL) method after electron irradiation. The detection limit was obtained from the intensity ratio of the G-line to the free exciton line with the G-line intensity twice as high as the noise level and was estimated at 4 × 1013 cm−3 under the measurement condition in accordance with the standard [JIS H0615] for quantification of donor and acceptor impurities in Si at 4.2 K. We showed that the limit is extendable down to 2 × 1013 cm−3 by optimizing the excitation power and sample temperature.