Conduction mechanisms of oxide leakage current in p-channel 4H-SiC MOSFETs
Author:
Funder
Japan Society for the Promotion of Science
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ab7ddb/pdf
Reference38 articles.
1. Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices
2. Material science and device physics in SiC technology for high-voltage power devices
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