Plasma simulation for dual-frequency capacitively coupled plasma incorporating gas flow simulation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/abc106/pdf
Reference37 articles.
1. Si Etch Rate and Etch Yield with Ar+/Cl2System
2. Redeposition of etch products on sidewalls during SiO[sub 2] etching in a fluorocarbon plasma. V. Effects of C∕F ratio in plasma gases
3. Mechanism of Sidewall Necking and Bowing in the Plasma Etching of High Aspect-Ratio Contact Holes
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1. Optimization of RF Frequencies in Dual-Frequency Capacitively Coupled Plasma Apparatus Using Genetic Algorithm (GA) and Plasma Simulation;IEEE Transactions on Semiconductor Manufacturing;2023-11
2. Comparison of distributions of etching rate and calculated plasma parameters in dual-frequency capacitively coupled plasma;Japanese Journal of Applied Physics;2023-08-23
3. Effects of a radial variation of surface coefficients on plasma uniformity in capacitive RF discharges;Plasma Sources Science and Technology;2023-04-01
4. Optimization of RF Frequencies in Dual-frequency Capacitively Coupled Plasma Apparatus Using Genetic Algorithm (GA) and Plasma Simulation;2022 International Symposium on Semiconductor Manufacturing (ISSM);2022-12-12
5. Estimations of secondary electron emission coefficients of Si, SiO2, and polyimide electrodes in dual-frequency capacitively coupled discharge;Japanese Journal of Applied Physics;2022-11-11
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