Redeposition of etch products on sidewalls during SiO[sub 2] etching in a fluorocarbon plasma. V. Effects of C∕F ratio in plasma gases-Reference-Cited by-同舟云学术

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Redeposition of etch products on sidewalls during SiO[sub 2] etching in a fluorocarbon plasma. V. Effects of C∕F ratio in plasma gases

Published:2004 Issue:6 Volume:22 Page:2580
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Min Jae-Ho,Lee Gyeo-Re,Lee Jin-Kwan,Heup Moon Sang

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Estimations of secondary electron emission coefficients of Si, SiO₂, and polyimide electrodes in dual-frequency capacitively coupled discharge;Japanese Journal of Applied Physics;2022-11-11

2. Plasma Polymerization;Nonthermal Plasmas for Materials Processing;2022-07-15

3. Ar/SF6 plasma simulation for dual-frequency capacitively coupled plasma incorporating gas flow simulation and secondary electron emission;Japanese Journal of Applied Physics;2021-12-15

4. Plasma simulation for dual-frequency capacitively coupled plasma incorporating gas flow simulation;Japanese Journal of Applied Physics;2020-10-30

5. Synthesis of vertically aligned and tree-like carbon nanostructures;Carbon;2018-07

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