Thermodynamic analysis for nonpolar III-nitride surfaces under metalorganic vapor-phase epitaxy conditions
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ab68af/pdf
Reference27 articles.
1. Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
2. Spontaneous polarization and piezoelectric constants of III-V nitrides
3. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
4. Ultraviolet light-emitting diodes based on group three nitrides
5. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire
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1. High growth temperature for AlN by jet stream gas flow metalorganic vapor phase epitaxy;Scientific Reports;2023-02-10
2. Crystal truncation rods from miscut surfaces with alternating terminations;Physical Review B;2021-03-02
3. Effect of Step Edges on Adsorption Behavior for GaN(0001) Surfaces during Metalorganic Vapor Phase Epitaxy: An Ab Initio Study;Crystal Growth & Design;2020-06-04
4. Roles of growth kinetics on GaN non-planar facets under metalorganic vapor phase epitaxy condition;Applied Physics Express;2020-05-20
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