Temperature dependence of diamond MOSFET transport properties
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ab70a7/pdf
Reference37 articles.
1. Device properties of homoepitaxially grown diamond
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4. 1 Ω On-Resistance Diamond Vertical-Schottky Barrier Diode Operated at 250 °C
5. Zr/oxidized diamond interface for high power Schottky diodes
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1. High Temperature Performance of Enhanced Endurance Hydrogen Terminated Transparent Polycrystalline Diamond FET;IEEE Electron Device Letters;2022-07
2. Electrical Characteristics of Diamond MOSFET with 2DHG on a Heteroepitaxial Diamond Substrate;Materials;2022-03-31
3. Inversion channel MOSFET on heteroepitaxially grown free-standing diamond;Carbon;2021-04
4. Carrier transport mechanism of diamond p+–n junction at low temperature using Schottky–pn junction structure;Japanese Journal of Applied Physics;2021-02-18
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