Inversion channel MOSFET on heteroepitaxially grown free-standing diamond-Reference-Cited by-同舟云学术

Inversion channel MOSFET on heteroepitaxially grown free-standing diamond

Published:2021-04 Issue: Volume:175 Page:615-619
ISSN:0008-6223
Container-title:Carbon
language:en
Short-container-title:Carbon

Author:

Zhang Xufang,Matsumoto Tsubasa^ORCID,Nakano Yuta,Noguchi Hitoshi,Kato Hiromitsu,Makino Toshiharu,Takeuchi Daisuke^ORCID,Ogura Masahiko^ORCID,Yamasaki Satoshi,Nebel Christoph E.,Inokuma Takao,Tokuda Norio

Funder

Japan Society for the Promotion of Science

New Energy and Industrial Technology Development Organization

Publisher

Elsevier BV

Subject

General Chemistry,General Materials Science

Reference37 articles.

1. High carrier mobility in ultrapure diamond measured by time-resolved cyclotron resonance;Akimoto;Appl. Phys. Lett.,2014

2. Diamond as an electronic material;Wort;Mater. Today,2008

3. Time-resolved cyclotron resonance on dislocation-free HPHT diamond;Akimoto;Diam. Relat. Mater.,2016

4. Quantitative relevance of substitutional impurities to carrier dynamics in diamond;Shimomura;Phys. Rev. Mater.,2018

5. Diamond field-effect transistors with 1.3 A/mm drain current density by Al2O3 passivation layer;Hirama;Jpn. J. Appl. Phys.,2012

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