Sluggish Electron Transfer of Oxygen-Terminated Moderately Boron-Doped Diamond Electrode Induced by Large Interfacial Capacitance between a Diamond and Silicon Interface-Reference-Cited by-同舟云学术

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Sluggish Electron Transfer of Oxygen-Terminated Moderately Boron-Doped Diamond Electrode Induced by Large Interfacial Capacitance between a Diamond and Silicon Interface

Published:2024-03-08 Issue:3 Volume:4 Page:1184-1193
ISSN:2691-3704
Container-title:JACS Au
language:en
Short-container-title:JACS Au

Author:

Otake Atsushi¹,Nishida Taiki²,Ohmagari Shinya²,Einaga Yasuaki¹^ORCID

Affiliation:

1. Department of Chemistry, Keio University, 3-14-1 Hiyoshi, Yokohama 223-8522, Japan

2. Sensing Material Research Team, Sensing System Research Center, National Institute of Advanced Industrial Science and Technology, 807-1 Shukumachi, Tosu, Saga 841-0052, Japan

Funder

New Energy and Industrial Technology Development Organization

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/jacsau.4c00006

Reference85 articles.

1. Power Electronics Device Applications of Diamond Semiconductors

2. Diamond as an electronic material

3. Diamond power devices: state of the art, modelling, figures of merit and future perspective

4. Recent advances in diamond power semiconductor devices

5. Diamond semiconductor and elastic strain engineering

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1. Novel graphite-based boron-doped diamond coated electrodes with refractory metal interlayer for high-efficient electrochemical oxidation degradation of phenol;Separation and Purification Technology;2024-09

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