Ultrawide bandgap Al x Ga1–x N channel heterostructure field transistors with drain currents exceeding 1.3 A mm−1-Reference-Cited by-同舟云学术

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Ultrawide bandgap Al x Ga1–x N channel heterostructure field transistors with drain currents exceeding 1.3 A mm−1

Published:2020-09-01 Issue:9 Volume:13 Page:094002
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Gaevski Mikhail,Mollah Shahab^ORCID,Hussain Kamal,Letton Joshua,Mamun Abdullah,Jewel Mohi Uddin,Chandrashekhar MVS,Simin Grigory,Khan Asif

Funder

National Science Foundation

Army Research Office

Defense Advanced Research Projects Agency

ASPIRE- University of South Carolina

Multidisciplinary University Research Initiatives

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

https://iopscience.iop.org/article/10.35848/1882-0786/abb1c8/pdf

Reference31 articles.

1. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

2. AlGaN Channel HEMT With Extremely High Breakdown Voltage

3. An AlN/Al0.85Ga0.15N high electron mobility transistor

4. AlN/AlGaN HEMTs on AlN substrate for stable high‐temperature operation

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts;Advanced Materials Interfaces;2024-03-29

2. AlN/AlGaN/AlN quantum well channel HEMTs;Applied Physics Letters;2023-05-29

3. High figure of merit extreme bandgap Al_0.87Ga_0.13N-Al_0.64Ga_0.36N heterostructures over bulk AlN substrates;Applied Physics Express;2023-01-01

4. Threshold voltage control with high-temperature gate-oxide annealing in ultrawide bandgap AlGaN-channel MOSHFETs;Applied Physics Express;2022-09-06

5. Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors;Progress in Quantum Electronics;2022-05

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