Unique degradation under AC stress in high-mobility amorphous In–W–Zn–O thin-film transistors
Author:
Funder
Tateishi Science and Technology Foundation
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
https://iopscience.iop.org/article/10.35848/1882-0786/ab88c5/pdf
Reference39 articles.
1. Hot carrier degradation in low temperature processed polycrystalline silicon thin film transistors
2. Analysis of Drain Field and Hot Carrier Stability of Poly-Si Thin Film Transistors
3. Determination of hot-carrier induced interface state density in polycrystalline silicon thin-film transistors
4. Reliability of High-Frequency Operation of Low-Temperature Polysilicon Thin Film Transistors under Dynamic Stress
5. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
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