Reliability of High-Frequency Operation of Low-Temperature Polysilicon Thin Film Transistors under Dynamic Stress-Reference-Cited by-同舟云学术

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Reliability of High-Frequency Operation of Low-Temperature Polysilicon Thin Film Transistors under Dynamic Stress

Published:2000-12-01 Issue:Part 2, No. 12A Volume:39 Page:L1209-L1212
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Uraoka Yukiharu,Hatayama Tomoaki,Fuyuki Takashi,Kawamura Tetsuya,Tsuchihashi Yuji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gate Voltage Pulse Rising Edge Dependent Dynamic Hot Carrier Degradation in Poly-Si Thin-Film Transistors;IEEE Electron Device Letters;2021-11

2. 29.1: Invited Paper: Degradation Mechanism of High Mobility Oxide Thin Film Transistors for Next Generation Display;SID Symposium Digest of Technical Papers;2021-08

3. Excellent Mechanical Durability of In‐Folding Stress of Poly‐Si Thin‐Film Transistor on Plastic Substrate Compared with Out‐Folding: Generation of Gate Leakage Currents in Flexible Poly‐Si Thin‐Film Transistor by Out‐Folding and Bias‐Temperature Stress;Advanced Engineering Materials;2020-10-27

4. Unique degradation under AC stress in high-mobility amorphous In–W–Zn–O thin-film transistors;Applied Physics Express;2020-04-23

5. Hot carrier effects in InGaZnO thin-film transistor;Applied Physics Express;2019-08-30

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