Excellent Mechanical Durability of In‐Folding Stress of Poly‐Si Thin‐Film Transistor on Plastic Substrate Compared with Out‐Folding: Generation of Gate Leakage Currents in Flexible Poly‐Si Thin‐Film Transistor by Out‐Folding and Bias‐Temperature Stress-Reference-Cited by-同舟云学术

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Excellent Mechanical Durability of In‐Folding Stress of Poly‐Si Thin‐Film Transistor on Plastic Substrate Compared with Out‐Folding: Generation of Gate Leakage Currents in Flexible Poly‐Si Thin‐Film Transistor by Out‐Folding and Bias‐Temperature Stress

Published:2020-10-27 Issue:3 Volume:23 Page:2000901
ISSN:1438-1656
Container-title:Advanced Engineering Materials
language:en
Short-container-title:Adv. Eng. Mater.

Author:

Kim Dongjin¹,Billah Mohammad Masum¹,Lee Suhui¹,Siddik Abu Bakar¹,Cho Young Joo¹,Jang Jin¹^ORCID,Lee Jaeseob²,Lee Yongsu²,Shin Jiyeong²

Affiliation:

1. Advanced Display Research Center (ADRC), Department of Information Display Kyung Hee University 26 Kyungheedae-ro, Dongdaemun-gu Seoul 02447 Korea

2. Display Research Center Samsung Display Co., Ltd. #1 Samsung-ro, Giheung-gu, Yongin-si Gyeonggi-do 17113 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adem.202000901

Reference56 articles.

1. Epidermal Electronics

2. Novel oxide amorphous semiconductors: transparent conducting amorphous oxides

3. Self-Powered Nanosensors and Nanosystems

4. LTPS TFT Process on Polyimide Substrate for Flexible AMOLED

5. Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping*

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1. ZrAlO_x by Spray Pyrolysis as Gas Barrier for Oxide TFTs on Flexible Substrates;IEEE Transactions on Electron Devices;2024-01

2. Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress;Advanced Functional Materials;2023-10-11

3. Frequency Dependent Degradation and Failure of Flexible a-InGaZnO Thin-Film Transistors Under Dynamic Stretch Stress;IEEE Transactions on Device and Materials Reliability;2023-09

4. Strong Frequency Dependence of Degradation and Failure of Flexible Poly-Si Thin-Film Transistors Under Dynamic Mechanical Stress;IEEE Transactions on Electron Devices;2023-07

5. Electrical Reliability of Flexible Low-Temperature Polycrystalline Oxide Thin-Film Transistors Under Mechanical Stress;IEEE Transactions on Electron Devices;2023-02

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