Lateral charge migration induced abnormal read disturb in 3D charge-trapping NAND flash memory-Reference-Cited by-同舟云学术

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Lateral charge migration induced abnormal read disturb in 3D charge-trapping NAND flash memory

Published:2020-04-17 Issue:5 Volume:13 Page:054002
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Wang Fei,Cao Rui,Kong Yachen,Ma Xiaolei^ORCID,Zhan Xuepeng,Li Yuan,Chen Jiezhi

Funder

China Key Research and Development Program

National Natural Science Foundation of China

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

https://iopscience.iop.org/article/10.35848/1882-0786/ab8729/pdf

Reference30 articles.

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability;Micromachines;2024-08-23

2. Modeling of 3D NAND Characteristics for Cross‐Temperature by Using Graph Neural Network and Its Application;Advanced Intelligent Systems;2023-10-09

3. High-Precision Short-Term Lifetime Prediction in TLC 3-D NAND Flash Memory as Hot-Data Storage;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2023-10

4. Fabrication of a Hole‐Type Vertical Resistive‐Switching Random‐Access Array and Intercell Interference Induced by Lateral Charge Spreading;Advanced Electronic Materials;2022-12-23

5. String Current Compensation Method in VNAND Flash for Hardware-Based BNNs;IEEE Transactions on Electron Devices;2022-12

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