Low dislocation density AlN on sapphire prepared by double sputtering and annealing-Reference-Cited by-同舟云学术

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Low dislocation density AlN on sapphire prepared by double sputtering and annealing

Published:2020-08-18 Issue:9 Volume:13 Page:095501
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Wang Ding,Uesugi Kenjiro,Xiao Shiyu,Norimatsu Kenji,Miyake Hideto

Funder

JSPS KAKENHI

MEXT “Program for Research and Development of Next-Generation Semiconductor to Realize Energy-Saving Society"

JST CREST

MEXT "Program for Building Regional Innovation Ecosystems"

JST SICORP-EU

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

https://iopscience.iop.org/article/10.35848/1882-0786/ababec/pdf

Reference33 articles.

1. III-Nitride Ultraviolet Emitters

2. Application of GaN-based ultraviolet-C light emitting diodes – UV LEDs – for water disinfection

3. Dislocation effect on light emission efficiency in gallium nitride

4. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of porous media and substrate rotation on AlN growth in MNVPE reactors based on CFD simulations;Materials Science in Semiconductor Processing;2024-11

2. Effect of stress control by growth adjustment on the edge thread dislocation density of AlN grown on the sapphire;Semiconductor Science and Technology;2024-06-17

3. Progress in Performance of AlGaN‐Based Ultraviolet Light Emitting Diodes;Advanced Electronic Materials;2024-03-09

4. Realization of low specific-contact-resistance on N-polar GaN surfaces using heavily-Ge-doped n-type GaN films deposited by low-temperature reactive sputtering technique;Applied Physics Express;2024-03-01

5. Elimination of spiral hillocks in AlGaN grown on high-temperature annealed AlN templates by adopting an AlN/AlGaN stress modulation multilayer;Applied Physics Letters;2024-02-05

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