Dislocation effect on light emission efficiency in gallium nitride
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1527225
Reference15 articles.
1. Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
2. Phase separation in InGaN/GaN multiple quantum wells and its relation to brightness of blue and green LEDs
3. Barrier-width dependence of group-III nitrides quantum-well transition energies
4. Optical properties of InGaN quantum wells
5. Optical gain in GaN quantum wells with many-body effects
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