Reliable Characterization of Microcrystalline Silicon Films for Thin Film Transistor Applications-Reference-Cited by-同舟云学术

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Reliable Characterization of Microcrystalline Silicon Films for Thin Film Transistor Applications

Published:2008-09-12 Issue:9 Volume:47 Page:7308-7310
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Abramov Alexey,Roca i Cabarrocas Pere,Girotra Kunal,Chen Hong,Park Seungkyu,Park Kyongtae,Huh Jong-moo,Choi Joonhoo,Kim Chiwoo,Souk Jun H.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference16 articles.

1. A 6.94-in. WVGA poly-Si TFT-LCD with integrated driver including sequential analog sampling circuits

2. Hole and electron field-effect mobilities in nanocrystalline silicon deposited at 150 °C

3. Directly deposited nanocrystalline silicon thin-film transistors with ultra high mobilities

4. Microcrystalline silicon: An emerging material for stable thin-film transistors

5. Critical issues in plasma deposition of microcrystalline silicon for thin film transistors

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1. Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF4 Based Process Conditions;Materials;2021-11-17

2. Microcrystalline silicon thin film deposition from silicon tetrafluoride: Isolating role of ion energy using tailored voltage waveform plasmas;Solar Energy Materials and Solar Cells;2019-02

3. 2.4 Thin Films;Comprehensive Energy Systems;2018

4. Microcrystalline silicon thin films deposited by matrix-distributed electron cyclotron resonance plasma enhanced chemical vapor deposition using an SiF4 /H2chemistry;Journal of Physics D: Applied Physics;2016-06-21

5. Deposition of microcrystalline silicon in electron-cyclotron resonance discharge (24GHz) plasma from silicon tetrafluoride precursor;Thin Solid Films;2014-07

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