Critical issues in plasma deposition of microcrystalline silicon for thin film transistors-Reference-Cited by-同舟云学术

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Critical issues in plasma deposition of microcrystalline silicon for thin film transistors

Published:2008-03 Issue:3 Volume:52 Page:422-426
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Roca i Cabarrocas Pere,Djeridane Yassine,Bui V.D.,Bonnassieux Yvan,Abramov Alexey

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. The preparation of thin layers of Ge and Si by chemical hydrogen plasma transport

2. Potential of amorphous and microcrystalline silicon solar cells

3. Mass productions of thin film silicon PV modules

4. Thin Film Transistors Made from Hydrogenated Microcrystalline Silicon

5. Silicon for thin-film transistors

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1. Highly conductive p-type nc-SiOX:H thin films deposited at 130°C via efficient incorporation of plasma synthesized silicon nanocrystals and their application in SHJ solar cells;Solar Energy Materials and Solar Cells;2024-03

2. Origin of Rapid Coalescence and Active Unstable Fluctuation of Au Nanoparticles under TEM Observation: Electron Bombardment Versus Charge Buildup;Crystal Growth & Design;2022-10-27

3. Features of hydrogen reduction of SiF4 in ICP plasma;Spectrochimica Acta Part B: Atomic Spectroscopy;2022-09

4. Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF4 Based Process Conditions;Materials;2021-11-17

5. Non-classical Crystallization of Bulk Crystals in Solution and of Thin Films in the Gas Phase by Chemical Vapor Deposition;Electronic Materials Letters;2021-10-18

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