Deposition of microcrystalline silicon in electron-cyclotron resonance discharge (24GHz) plasma from silicon tetrafluoride precursor-Reference-Cited by-同舟云学术

Deposition of microcrystalline silicon in electron-cyclotron resonance discharge (24GHz) plasma from silicon tetrafluoride precursor

Published:2014-07 Issue: Volume:562 Page:114-117
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Mansfeld D.А.,Vodopyanov А.V.,Golubev S.V.,Sennikov P.G.,Mochalov L.A.,Andreev B.А.,Drozdov Yu N.,Drozdov М.N.,Shashkin V.I.,Bulkin P.,Roca i Cabarrocas P.

Funder

Russian Academy of Sciences

Presidential RSS Council

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference24 articles.

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5. Microcrystalline silicon films deposited by electron cyclotron resonance plasma chemical vapor deposition using helium gas;Lee;Jpn. J. Appl. Phys.,1996

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